Film removing device and film removing method

ABSTRACT

A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional application of application Ser. No.11/831,190, filed Jul. 31, 2007 and claims the benefit of priority fromthe prior Japanese patent Application No. 2006-209421 filed on Aug. 1,2006. The entire contents of Ser. No. 11/831,190 and 2006-209421 areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a film removing device for and a filmremoving method of removing a film from, for example, photomasksubstrates, namely, reticles, and glass substrates for FPDs (flat paneldisplays).

2. Description of the Related Art

Generally, processes for manufacturing, for example, photomasks andliquid crystal displays (LCDs), similarly to semiconductor devicefabricating processes, uses photolithography for forming, for example, athin film of ITO (indium tin oxide) or a circuit pattern on a substrate.For example, a resist solution application process applies a resistsolution to a surface of a substrate so as to form a resist film, anexposure process exposes the resist film so as to form a latent circuitpattern in the resist film, and a developing process develops the latentcircuit pattern so as to form a circuit pattern.

A coating method what is called the spin coating method is used widelyby the resist solution application process. It occurs sometimes, when aresist solution is applied to a substrate by the spin coating method inthe resist solution application process, that the resist solution isattracted to a peripheral part of the substrate by the agency of surfacetension after the rotation of the substrate is stopped and anycentrifugal force acts on the film of the resist solution, and thethickness of a part of the film of the resist solution on the peripheralpart of the substrate increases. In some cases, part of the resistsolution poured onto the upper surface of the substrate flows around theedge of the substrate to the lower surface of the substrate to form anunnecessary resist film on a peripheral part of the substrate. Such anunnecessary resist film needs to be removed.

A known thin film removing device (method) disclosed in US 2004/0226916A1 includes approach stages disposed close to the periphery of asubstrate supported on support members and including flat approach partsrespectively having surfaces flush with the surface of the substrate.The entire content of US 2004/0226916 A1 is incorporated herein byreference. In this known thin film removing device (method), a removingunit jets a solvent toward the peripheral part of the substrate and theremoving unit sucks a solution produced by dissolving the thin film inthe solvent, while the removing unit is being moved along the peripheralpart of the substrate and the approach stage. This thin film removingdevice (method) can remove straight parts of the thin film on thecorners of the substrate and can suppress the creation of mist.

However, in some cases, the thin film removing device (method) cannotsuck all the solution wetting the side surfaces of the substrate. Insome cases, the solution wetting the side surfaces of the substrateflows onto the upper surface of the substrate and forms stains in partof the thin film on the corners of the substrate. The stains formed inthe thin film spoils the appearance of the substrate. If part of thethin film for forming a circuit pattern is stained, the thin film cannotbe used for forming the circuit pattern.

SUMMARY OF THE INVENTION

The present invention has been made in view of those problems and it istherefore an object of the present invention to provide a thin filmremoving device and a thin film removing method capable of suppressingstaining parts of a thin film formed on corners of the substrate duringa thin film removing process for removing unnecessary parts of the thinfilm formed on a peripheral part of the substrate.

A first film removing device according to the present invention forremoving an unnecessary part, formed on a peripheral part of a substratehaving a corner, of a film of a coating solution formed on the substrateby spouting a solvent on the peripheral part of the substrate, said filmremoving device comprising: a support member that supports thesubstrate; an approach stage disposed near a first side surface of thesubstrate supported on the support member, the approach stage having aflat approach part having a surface flush with a surface of thesubstrate supported on the support member; a film removing unit providedwith a spouting port through which the solvent is spouted toward theperipheral part of the substrate supported on the support member and asuction port through which a solution is sucked; a moving mechanismconfigured to move the film removing unit along a second side surface,continuous with the first side surface, of the substrate supported onthe support member and the approach stage; and a gas spouting systemconfigured to spout a gas into a gap formed between the flat approachpart of the approach stage and the substrate supported on the supportmember; wherein the flat approach part faces the first side surface ofthe substrate supported on the support member at the corner where thefirst side surface and the second side surface join, and the gasspouting system spouts the gas into the gap formed between a sidesurface, facing the substrate, of the flat approach part and the firstside surface, corresponding to the corner, of the substrate supported onthe support member along the first side surface toward a side of thesecond side surface.

In the first film removing device according to the present invention,the gas spouting system may be provided with a spouting port opening inthe side surface, facing the substrate, of the flat approach part, and agas discharge passage having one end connected to the spouting port. Inthe film removing device, at least a part, including the one endconnected to the spouting port and extending near the substratesupported on the support member, of the discharge passage may beinclined at an angle of 45° or below to a direction parallel to thefirst side surface of the substrate supported on the support member.

In the first film removing device according to the present invention,the gas spouting system may be provided with a nozzle having a dischargepassage substantially parallel to the first side surface of thesubstrate supported on the support member so as to spout the gas in adirection substantially parallel to the first side surface of thesubstrate.

In the first film removing device according to the present invention,the flat approach part may have a protrusion protruding toward thesubstrate, the gas spouting system may be provided with a spouting portopening in the protrusion and a discharge passage having one endconnected to the spouting port, the discharge passage may be extended inthe protrusion from the spouting port substantially parallel to thefirst side surface of the substrate supported on the support member, andthe gas spouting system may spout the gas in a direction substantiallyparallel to the first side surface of the substrate supported on thesupport member.

The first film removing device according to the present invention mayfurther include a suction mechanism that sucks a gas, or a gas and aliquid drop from the gap between the flat approach part of the approachstage and the substrate supported on the support member. In this filmremoving device according to the present invention, the gas spoutingsystem may have a spouting port opening in the side surface, facing thesubstrate, of the flat approach part, and a discharge passage having oneend connected to the spouting port, the suction mechanism has a suctionport opening in the side surface, facing the substrate, of the flatapproach, and a suction passage having one end connected to the suctionport, and the spouting port of the gas spouting system opens in the sidesurface of the flat approach part facing the substrate at a positionnearer to the second side surface of the substrate than the suction portof the suction mechanism.

The first film removing device according to the present invention mayfurther include a substrate holding mechanism, that delivers a substrateto and receives the same from the support member, capable of movingvertically and of turning about a vertical axis through an angle of 90°.

A second film removing device according to the present invention forremoving an unnecessary part, formed on a peripheral part of a substratehaving a corner, of a film of a coating solution formed on the substrateby spouting a solvent on the peripheral part of the substrate, said filmremoving device comprising: a support member that supports thesubstrate; an approach stage disposed near a first side surface of thesubstrate supported on the support member, the approach stage having aflat approach part having a surface flush with a surface of thesubstrate supported on the support member; a film removing unit providedwith a spouting port through which the solvent is spouted toward theperipheral part of the substrate supported on the support member and asuction port through which a solution is sucked; a moving mechanismconfigured to move the film removing unit along a second side surface,continuous with the first side surface, of the substrate supported onthe support member and the approach stage; and a controller thatcontrols the film removing unit and the moving mechanism; wherein theflat approach part faces the first side surface of the substratesupported on the support member at the corner where the first sidesurface and the second side surface join, and the controller controlsthe film removing unit and the moving mechanism such that the filmremoving unit executes a sucking operation to suck a gas, or a gas andliquid a drop through the suction port from a gap formed between thesubstrate supported on the support member and the flat approach part atleast while the film removing unit is moving past a position facing thegap.

The second film removing device according to the present invention mayfurther include a substrate holding mechanism, that delivers a substrateto and receives the same from the support member, capable of movingvertically and of turning about a vertical axis through an angle of 90°.

A first film removing method according to the present invention ofremoving an unnecessary part, formed on a peripheral part of a substratehaving a corner, of a film of a coating solution formed on the substrateby spouting a solvent on the peripheral part of the substrate, said filmremoving method comprising: a substrate mounting step of mounting thesubstrate on a support member with a first side surface of the substrateextended near an approach stage; and a film removing step of spouting asolvent toward the peripheral part of the substrate by a film removingunit and sucking a solution by the film removing unit while the filmremoving unit is being moved along a second side surface, continuouswith the first side surface, of the substrate and the approach stage;wherein in the substrate mounting step, the substrate is supported onthe support member such that the first side surface faces a flatapproach part of the approach stage at the corner, where the first sidesurface and the second side surface of the substrate join, and a surfaceof the substrate is substantially flush with a surface of the flatapproach part of the approach stage, and in the film removing step, agas is spouted into a gap formed between a side surface, facing thesubstrate, of the flat approach part and the first side surface,corresponding to the corner, of the substrate along the first sidesurface toward a side of the second side surface by a gas spoutingsystem so as to prevent a solution from flowing into the gap, at leastwhile the film removing unit is moving past a position facing the gap.

In the first film removing method according to the present invention, inthe film removing step, a suction mechanism may suck a gas, or a gas anda liquid drop from the gap while the gas spouting system is spouting thegas into the gap so as to prevent the solution from flowing into thegap. The first film removing method according to the present inventionmay be used for removing an unnecessary parts of a film formed on aquadrilateral substrate. This first film removing method may furtherinclude: a position changing step of changing an position of thesubstrate by lifting up the substrate from the support member andturning the substrate through an angle of 90° about a vertical axisafter the completion of the film removing step; a second substratemounting step of mounting the substrate again on the support member withthe second side surface, continuous with the first side surface, of thesubstrate extended near the approach stage; and a second film removingstep of spouting a solvent toward the peripheral part of the substrateby the film removing unit and sucking a solution by the film removingunit while the film removing unit is being moved along a third sidesurface, continuous with the second side surface and opposite to thefirst side surface, of the substrate and the approach stage; wherein inthe second substrate mounting step, the substrate is supported on thesupport member such that the second side surface faces the flat approachpart of the approach stage at a second corner, where the second sidesurface and the third side surface of the substrate join, and thesurface of the substrate is substantially flush with the surface of theflat approach part of the approach stage, and a gas is spouted into agap formed between the side surface, facing the substrate, of the flatapproach part and the second side surface, corresponding to the secondcorner, of the substrate along the second side surface toward a side ofthe third side surface by the gas spouting system so as to prevent asolution from flowing into the gap at least while the film removing unitis moving past a position facing the gap. In at least one of the filmremoving step and the second film removing step of this film removingmethod, a suction mechanism may suck a gas, or a gas and a liquid dropfrom the gap while the gas spouting system is spouting the gas into thegap so as to prevent the flow of the solution into the gap.

A second film removing method according to the present invention ofremoving an unnecessary part, formed on a peripheral part of a substratehaving a corner, of a film of a coating solution formed on the substrateby spouting a solvent on the peripheral part of the substrate, said filmremoving method comprising: a substrate mounting step of mounting thesubstrate on a support member with a first side surface of the substrateextended near an approach stage; and a film removing step of spouting asolvent toward the peripheral part of the substrate by a film removingunit and sucking a solution by the film removing unit while the filmremoving unit is being moved along a second side surface, continuouswith the first side surface, of the substrate and the approach stage;wherein in the substrate mounting step, the substrate is supported onthe support member such that the first side surface faces a flatapproach part of the approach stage at the corner, where the first sidesurface and the second side surface of the substrate join, and a surfaceof the substrate is substantially flush with a surface of the flatapproach part of the approach stage, and in the film removing step, thefilm removing unit sucks a gas, or a gas and a liquid drop from a gapformed between the substrate and the flat approach part so as to preventa solution from flowing into the gap at least while the film removingunit is moving past a position facing the gap.

The second film removing method according to the present invention maybe used for removing an unnecessary parts of a film formed on aquadrilateral substrate. This second film removing method may furtherinclude: an position changing step of changing an position of thesubstrate by lifting up the substrate from the support member andturning the substrate through an angle of 90° about a vertical axisafter the completion of the film removing step; a second substratemounting step of mounting the substrate again on the support member withthe second side surface, continuous with the first side surface, of thesubstrate extended near the approach stage; and a second film removingstep of spouting a solvent toward the peripheral part of the substrateby the film removing unit and sucking a solution by the film removingunit while the film removing unit is being moved along a third sidesurface, continuous with the second side surface and opposite to thefirst side surface, of the substrate and the approach stage; wherein inthe second substrate mounting step, the substrate is supported on thesupport member such that the second side surface faces the flat approachpart of the approach stage at a second corner, where the second sidesurface and the third side surface of the substrate join, and thesurface of the substrate is substantially flush with the surface of theflat approach part of the approach stage, and in the second filmremoving step, the film removing unit sucks a gas, or a gas and a liquiddrop from a gap formed between the substrate and the flat approach partso as to prevent a solution from flowing into the gap at least while thefilm removing unit is moving past a position facing the gap.

According to the present invention, the film removing device can carryout stable operations for spouting the solvent and sucking the solutionfor the sides and the corners of the substrate, and the coating solutioncan be prevented from flowing from the side surface of the substratethrough a top of the corner to the adjacent side surface of thesubstrate while the film removing unit is in a film removing operationfor removing the unnecessary parts of the film by spouting the gas bythe gas spouting system. Thus the film removing device and the filmremoving method can remove straight parts of the thin film on thecorners of the substrate, can suppress the creation of mist and cansuppress staining parts of the film formed on the corners of thesubstrate during the thin film removing process.

The suction mechanism sucks a gas and a liquid drop (mist) from the gapformed between the substrate and the approach stage while the gasspouting system is spouting the gas into the gaps. Thus the unnecessarygas and the mist flowing in the gaps toward a side opposite to a side ofthe side surface of the substrate being processed by the film removingdevice can be removed.

The quadrilateral substrate is lifted up and is turned through an angleof 90° after the unnecessary parts of the film have been removed fromperipheral part extending along one side surface of the substrate so asto remove unnecessary parts of the film from peripheral part extendingalong another side surface adjacent to the former side surfaces. Thefilm removing device and the film removing method can efficiently removeunnecessary parts of the thin film from a peripheral part of thesubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent from the following description takenin connection with the accompanying drawings, in which:

FIG. 1 is a schematic plan view of a resist solution applying andperipheral resist film removing system provided with a film removingdevice in one embodiment according to the present invention;

FIG. 2A is a schematic plan view of the film removing device in oneembodiment according to the present invention;

FIG. 2B is an enlarged sectional view of a circle I in FIG. 2A, andshows a gas spouting heads of a gas spouting system included in the filmremoving device shown in FIG. 2A;

FIG. 3 is a schematic side elevation of the film removing device shownin FIG. 2A;

FIG. 4A is a sectional view of a removing unit (resist film removingnozzle) included in the film removing device shown in FIG. 2A;

FIG. 4B is a view of assistance in explaining the operation of theremoving unit (resist film removing nozzle) shown in FIG. 4A;

FIG. 5 is a perspective view of the removing unit (resist film removingnozzle) and an approach stage included in the film removing device shownin FIG. 2A;

FIG. 6 is a perspective view of a substrate holding mechanism (chuck)and an approach stage included in the film removing device shown in FIG.2A;

FIG. 7 is a sectional view, corresponding to FIG. 2B, of another exampleof a gas spouting head of the gas spouting system;

FIG. 8 is a sectional view, corresponding to FIG. 2B, of a third exampleof a gas spouting head of the gas spouting system;

FIG. 9 is a sectional view, corresponding to FIG. 2B, of a fourthexample of a gas spouting head of the gas spouting system;

FIG. 10A is a sectional view, corresponding to FIG. 2B, of a suctionmechanism and a gas spouting head of the gas spouting system included inthe film removing device;

FIG. 10B is a view of assistance in explaining the operation of thesuction mechanism and a gas spouting system of the gas spouting systemshown in FIG. 10A;

FIG. 11 is a flow chart of a film removing method in one preferredembodiment according to the present invention;

FIGS. 12A and 12B are schematic plan views of a modification of a filmremoving device; and

FIG. 13 is a flow chart of a modification of a film removing method.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A film removing device in a preferred embodiment according to thepresent invention will be described as applied to a resist solutionapplying and peripheral resist film removing system for forming aphotomask on a substrate. The following description will be made on anassumption that a photomask substrate M (hereinafter, referred to simplyas “substrate M”) to be processed is a quadrilateral substrate, morespecifically, a square substrate M as shown in FIG. 2A, having a pair ofopposite surfaces (main surfaces), namely, an upper surface Ma1 and alower surface Ma2, and a first side surface Mb1, a second side surfaceMb2, a third side surface Mb3 and a fourth side surface Mb4. Peripheralparts to be processed of the substrate includes a first corner (a firstcorner part) Mc1, a second corner (a second corner part) Mc2, a thirdcorner (a third corner part) Mc3, a fourth corner (a fourth corner part)Mc4, a first edge part Md1, a second edge part Md2, a third edge partMd3 and a fourth edge part Md4.

FIG. 1 is a schematic plan view of a resist solution applying andperipheral resist film removing system 120, FIG. 2A is a schematic planview of a film removing device in a preferred embodiment, FIG. 2B is anenlarged, sectional view of a part I shown in FIG. 2A and FIG. 3 is aschematic side elevation of the film removing device.

The resist solution applying and peripheral resist film removing system120 includes a resist solution applying device 2, a peripheral filmremoving device (film removing device) 3, and a casing 1 surrounding theresist solution applying device 2 and the peripheral film removingdevice 3. The resist solution applying device 2 and the peripheral filmremoving device 3 are juxtaposed.

The resist solution applying device 2 includes a rotary cup 4, namely, aprocessing vessel, a spin chuck 5 for supporting the substrate M in therotary cup 4, and a resist solution pouring nozzle 6 for pouring down aresist solution onto a central part of the substrate M supported on thespin chuck 5.

The resist solution applying device 2 locates the resist solutionpouring nozzle 6 to a position above the center of the substrate Msupported on the spin chuck 5 and pours down the resist solution throughthe resist solution pouring nozzle 6 onto a central part of thesubstrate M. Subsequently, the spin chuck 5 is rotated at a highrotating speed to spread the resist solution over the substrate M bycentrifugal force. Thus the resist solution is spread in a uniform, thinfilm on the substrate M.

The spin chuck 5 is rotated together with the cup 4 (inner cup) at ahigh rotating speed to rotate the substrate M. This method of spreadingthe resist solution over the surface of the substrate M is employed informing a circuit pattern on a semiconductor wafer. However, it isdifficult for this method to spread the resist solution uniformly overthe surface of the substrate M for a photomask as compared withspreading the resist solution on a wafer because the substrate M isquadrilateral (square). Particularly, the four corners Mc1 to Mc4 of thesubstrate M are at a long distance from the center of the substrate M,Therefore, the circumferential speed of the corners Mc1 to Mc4 isconsiderably high and it is possible that the corners Mc1 to Mc4 turningat a high circumferential speed generate turbulent air currents aroundthe substrate M. The volatilization of a solvent contained in the resistsolution needs to be prevented as effectively as possible so that theresist solution spreads over the upper surface Ma1 at a fixed spreadingspeed to spread the resist solution uniformly over the upper surfaceMa1. Therefore, a photomask substrate fabricating system does not rotateonly the substrate M. The photomask substrate fabricating system sealsthe substrate M in the cup 4, and rotates the substrate M together withthe cup 4 in order to prevent the volatilization of the solvent and thegeneration of turbulent air currents around the substrate M.

The substrate M thus coated with a resist solution film is carried by apair of carrying arms (substrate carrying mechanism) 8 that moves alongguide rails 7 to the peripheral film removing device 3.

Referring to FIGS. 2A and 2B, the peripheral film removing device 3,namely, the film removing device, includes support members (supportstage) 22 for supporting the substrate M thereon, a substrate holdingmechanism 10, (namely, a chuck 10 in this embodiment), to which thesubstrate M is transferred from and from which the substrate M istransferred to the support members 22, two approach stages 20, namely,first and second approach stages 20, disposed near the two opposite sidesurfaces of the substrate M (the first side surface Mb1 and the thirdside surface Mb3 in a state shown in FIG. 2A) supported on the supportmembers 22, respectively, and two resist film removing nozzles 30(hereinafter, referred to as “film removing nozzles 30”), provided withspouting nozzle holes 34 a and 34 b for spouting a solvent towardperipheral parts of the substrate M supported on the support members 22and suction passages 31 b for sucking a solution, respectively. As shownin FIG. 2A, the two film removing nozzles 30 are connected to a movingmechanism 40. Each of the approach stages 20 has flat approach parts 23in opposite end parts thereof. As shown in FIG. 5, the upper surfaces ofthe flat approach parts 23 are substantially flush with the uppersurface Ma1 of the substrate M supported on the support members 22. Themoving mechanism 40 can move the film removing nozzles 30 along the twoother opposite side surfaces (the side surfaces Mb2 and Mb4 in the stateshown in FIG. 2A) and the approach stages 20. The two other oppositeside surfaces are continuous with the two opposite side surfaces. Eachflat approach part 23 faces the corner from a side of each of the twoopposite side surfaces, each corner being formed by a portion where eachof the two opposite side surfaces (the side surfaces Mb1 and Mb3 in thestate shown in FIG. 2A) and each of the two other opposite side surfaces(the side surfaces Mb2 and Mb4 in the state shown in FIG. 2A) join. Asclearly shown in FIG. 2B, the peripheral film removing device (the filmremoving device) 3 is provided with a gas spouting system 90 includinggas spouting heads 89 for spouting a gas into a gaps s formed betweenthe flat approach parts 23 of the approach stages 20 and the substratesupported on the support members. As stated below, the gas spoutingheads 89 of the gas spouting system 90 are configured to spout gas intogaps s formed between side surfaces of the flat approach parts 23 facingthe corners and the two opposite side surfaces in corners (in the stateshown in FIG. 2A, a gap s formed between the substrate M supported onthe support members 22 and the flat approach part 23 of the approachstage 20. In a state shown in FIG. 2A, the gas spouting head of the gasspouting system 90 spout a gas into the gap s formed between the firstside surface Mbl and a side surface of the flat approach part 23 facingthe first side surface Mb1 at the first corner Mc1, between the firstside surface Mb1 and a side surfaces of the flat approach parts 23facing the first side surface Mb1 at the fourth corner Mc4, between thethird side surface Mb3 and a side surfaces of the flat approach parts 23facing the third side surface Mb1 at the second corner Mcg, and betweenthe third side surface Mb3 and a side surface of the flat approach part23 facing the third side surface Mb3 at the third corner Mc3) along thetwo opposite side surfaces toward the two other opposite side surfaces.

Referring to FIGS. 3 and 6, the chuck 10, namely, the substrate holdingmechanism includes a chuck body 11 for holding the substrate M, asupport shaft 12 supporting the chuck body 11, and a lifting androtating mechanism 50 for vertically moving and rotating the supportshaft 12. The lifting and rotating mechanism 50 can move the chuck body11 in vertical directions, namely, Z-axis directions, and can rotate thechuck body in a horizontal plane defined by the X-axis and the Y-axis.The lifting and rotating mechanism 50 and the moving mechanism 40 areelectrically connected to a central processing unit 80 (hereinafter,referred to as “CPU 80”), namely, a controller, and are controlled bycontrol signals provided by the CPU 80. As shown in FIG. 6, in thisembodiment, the chuck body 11 has a hub 11 a connected to the upper endof the support shaft 12 and having the shape of a flat, quadrilateralplate, four plate-shaped arms 11 b radially projecting from the cornersof the hub 11 a, and a plate-shaped frame connected to the outer ends ofthe four arms 11 b. The four corners of the frame 11 c are chamfered ina flat shape. Four support pins 13 project upward from the four cornersof the frame 11 c, respectively, to support the substrate M with anarrow space formed between the upper surface of the chuck body 11 andthe lower surface Ma2 of the substrate M. Two holding pins 14 projectfrom each corner of the frame 11 c on the outer side of each the supportpin 13. When the substrate M is placed on the chuck body 11, the holdingpins 14 come into contact with the side surfaces of the substrate M torestrain the substrate M from movement on the chuck body 11.

As shown in FIGS. 3 and 6, the support members 22 are connected to thetops of support rods 21 set up on a base 9. The support members 22 havethe shape of a block. As shown in FIG. 6, each of the approach stages 20is fixed to the support member 22 with a bolt 29 so that the supportsurface thereof is substantially horizontal. As shown in FIG. 3, each ofthe support members 22 of this embodiment is provided with a positioningpin 22 a and a proximity pin 22 b. The positioning pins 22 a come intocontact with the edges of the substrate M to position the substrate Mcorrectly. The proximity pins 22 b support the substrate M with a narrowgap of, for example, 0.2 mm in thickness formed between the uppersurface of each support member 22 and the lower surface Ma2 of thesubstrate M.

The approach stage 20 will be described. The approach stage 20 has thesubstantially rectangular opposite flat approach parts 23. The uppersurfaces of the flat approach parts 23 are substantially flush with theupper surface Ma1 of the substrate M supported on the support members22. The approach stages 20 extend along the opposite side surfaces ofthe substrate M supported on the support members 22, respectively. Eachflat approach part 23 faces one of the two opposite side surfaces in acorner formed by a joining portion between one of the two opposite sidesurfaces and one of the two other opposite side surfaces. In a stateshown in FIG. 2A, the approach stages 20 extend along the first sidesurface Mb1 and the third side surface Mb3, respectively. In the stateshown in FIG. 2A, the opposite end surfaces, in a direction parallel tofirst and third side surfaces Mb1 and Mb3, of the approach stages 20 arealigned with the second side surface Mb2 and the fourth side surface Mb4of the substrate M, respectively. The thickness of the gaps s eachformed between the side surface of the substrate M supported on thesupport members 22 and the side surface, facing the side surface of thesubstrate M, of the flat approach part 23 of the approach stage 20 is,for example, 1.5 mm or above. As shown in FIG. 2A, the approach stages20 have a width equal to or greater than that of the film removingnozzles 30.

Preferably, at least the surfaces of the approach parts 23 of theapproach stages 20 are coated with a water repellent film, not shown.The water repellent film coating the surfaces of the approach parts 23makes difficult for a solvent, such as a thinner, used for removing thethin film, namely, a resist film, to adhere to the approach stages 20.Consequently, generation of particles that will contaminate thesubstrate M after the dissipation of the solvent can be suppressed.

The gas spouting system 90 will be described. As shown in FIG. 2B, eachof the gas spouting heads 89 of the gas spouting system 90 includesspouting port 91 a opening in the inner side surface, facing thesubstrate M supported on the support members, of the flat approach part23, an inlet port 91 b opening in the outer side surface, opposite theinner side surface, of the flat approach part 23, and a dischargepassage 91 extended between the spouting port 91 a and the inlet port 91b. The gas spouting system 90 includes the gas spouting heads 89, andthe supply line 93 provided with the shutoff valve V_(a) and connectingthe inlet port 91 b of the flat approach part 23 to the nitrogen gassource 94. The CPU 80, namely, the controller, is electrically connectedto the shutoff valve V_(a). The shutoff valve V_(a) is controlled bycontrol signals provided by the CPU 80. The shutoff valve V_(a) isopened to supply nitrogen gas from the nitrogen gas source 94 into thegas passage 91. In FIG. 2B, the nitrogen gas spouted by the gas spoutinghead of the gas spouting system 90 flows through the gap s between theside surface, facing the corner Mc1 of the substrate M, of the flatapproach part 23 and the first side surface Mb1, in the corner Mc1 ofthe substrate M along the first side surface Mb1 toward a side of thesecond side surface Mb2. The flow of the nitrogen gas in the gap s canprevent the resist solution removed from the substrate M from flowingfrom the second side surface Mb2 through a top of the corner Mc1 to thefirst side surface Mb1 during the operation of the film removing nozzle30 for removing unnecessary part of the film.

The construction of the gas spouting head of the gas spouting system 90is not limited to the foregoing construction. For example, it ispreferable that at least a part of the discharge passage 91, such as apart 92 of the discharge passage 91, terminating at the spouting pore 91a is inclined to the side surface of the substrate M facing the spoutingport 91 a, namely, the first side surface Mb1 in FIG. 7, at an acuteangle θ, between, for example, 20° and 45°. When the part 92 of thedischarge passage 91 is inclined to the side surface of the substrate Mat such an acute angle θ, the nitrogen gas spouted into the gap s canflow stably along the side surface of the substrate M. Consequently, theflow of the resist solution to the side surface joined at the top of thecorner to the side surface being process can be more surely prevented.

The gas spouting system 90A may include gas spouting heads 89A as shownin FIG. 8. Each of the gas spouting heads 89A of the gas spouting system90A includes a nozzle 95 extending parallel to the gap s and the sidesurface of the substrate M facing the flat approach part 23, and a gassupply line 96 connecting the nozzle 95 to a nitrogen gas source 94.Nitrogen gas can be spouted parallel to the gaps s into the gaps s andhence the flow of the resist solution into the gaps s can be more surelyprevented.

The gas spouting system 90B may include gas spouting heads 89B as shownin FIG. 9. Each of the flat approach part 23 is provided with protrusion97 facing the substrate M supported on the support members 22. Theprotrusion 97 protrudes toward one of the two opposite side surfaces(the first side surface Mb1, in the state shown in FIG. 9) of thesubstrate M supported on the support members 22. The protrusion 97 ispositioned at a part on a side of the flat approach part 23 apart fromthe top of the corner (apart from the second side surface Mb2, in thestate shown in FIG. 2A). In other words, the protrusion 97 is formed byforming a recess 98 in a part of the side surface of the flat approachpart 23 facing one of the two opposite side surfaces (first side surfaceMb1, in the state shown in FIG. 2A) around the top of the corner (firstcorner Mc1, in the state shown in FIG. 2A). Each gas spouting head 89Bof the gas spouting system 90B has a spouting port 91 a opening in asurface, facing the recess 98, of the protrusion 97, an inlet port 91 bopening in a side surface, opposite to the side surface facing thesubstrate M, of the flat approach part 23, and a discharge passage 99extended between the spouting port 91 a and the inlet port 91 b. The gasspouting system 90B includes the gas spouting heads 89B, and a gassupply line 93 connecting the discharge passage 99 to the nitrogen gassource 94. The discharge passage 99 formed in the flat approach part 23has a first passage 99 a extending in the protrusion 97 and parallel tothe side surface of the substrate M facing the flat approach part 23 anda second passage 99 b elongated between first passage 99 a and the inletport 91 b. According to this gas spouting system 90B, Nitrogen gasspouted through the spouting port 91 a can flow parallel to the gap s inthe gap s. Thus the flow of the resist solution into the gaps s can bemore surely prevented.

The film removing nozzle 30, namely, the film removing unit, will bedescribed. As shown in FIG. 4 a, the film removing nozzle 30 includes anozzle head 31 having a head base 31 a, an upper projection 32projecting from the head base 31 a, and a lower projection 33 projectingparallel to the upper projection 32 from the head base 31 a. The upperprojection 32 and the lower projection 33 of the nozzle head 31 define agroove 30 a having a bottom formed by the nozzle head 31 a. A peripheralpart of the substrate M can be received in the groove 30 a. When aperipheral part of the substrate M is received in the groove 30 a asshown in FIG. 4A, three sides of the peripheral part of the substrate Mis surrounded by the inside surfaces of the projections 32 and 33, andthe bottom surface of the groove 30 a with gaps of a small thickness of,for example, 1 mm formed between the upper surface Ma1 of the substrateM and the inside surface of the upper projection 32 and between thelower surface Ma2 of the substrate M and the inside surface of the lowerprojection 33, respectively. The upper projection 32 and the lowerprojection 33 are provided with spouting ports 34 a and 34 b,respectively, to spout a solvent, such as a thinner, against the uppersurface Ma1 and the lower surface Ma2 of the substrate M. The spoutingports 34 a and 34 b are not aligned with each other. The spouting ports34 a and 334 b are connected to a solvent source, for example, a thinnertank 36, by a thinner supply line 35. The thinner tank 36 is connectedto a compressed gas source 38 provided with a shutoff valve V1. Thecompressed gas source 38 supplies a compressed gas, such as compressednitrogen gas, to the thinner tank 36 to supply the thinner by pressurefrom the thinner tank 36 to the spouting ports 34 a and 34 b. Thethinner may be pumped from the thinner tank 36 to the spouting ports 34a and 34 b instead of supplying the thinner to the spouting ports 34 aand 34 b by the pressure of the compressed nitrogen gas.

Nitrogen gas spouting ports 39 a and 39 b are formed in the upperprojection 32 and the lower projection 33 at positions near the freeends of the upper projection 32 and the lower projection 33 and remotefrom the head base 31 a, respectively. The nitrogen gas spouting ports39 a and 39 b are connected to connecting passages 39 c, respectively.The connecting passages 39 c are connected to a nitrogen gas source 39Aby a nitrogen gas supply line 39 d provided with a shutoff valve V2. Asshown in FIG. 4A, the nitrogen gas spouting ports 39 a and 39 b areextended obliquely relative to a direction along which the groove 30 aextends so as to spout nitrogen gas in a direction from the centertoward the periphery (the side surface) of the substrate M.

The head base 31 a of the film removing nozzle 30 is provided with athrough hole extending through the head base 31 a. An exhaust line 31 cconnected to an exhaust system, not shown, is connected to the throughhole of the head base 31 a. The through hole of the head base 31 a isused as a suction passage 31 b through which an atmosphere in the groove30 a is sucked out together with liquid drops contained in theatmosphere.

Referring to FIGS. 2A and 5, the two film removing nozzles 30 areslidably mounted on two parallel guide rails 41, respectively. The guiderails 41 are disposed on the outer side of the chuck 10 and the supportmembers 22. The film removing nozzles 30 are driven by a movingmechanism 40 including so as to move along the guide rails 41. Themoving mechanism 40 includes, for example, a stepping motor 42 and atiming belt 43. The guide rails 41 are extended between the two approachstages 20 parallel to the two other opposite side surfaces (the secondside surface Mb2 and the fourth side surface Mb4, in the state shown inFIG. 2A) continuous with the two opposite side surfaces (the sidesurfaces Mb1 and Mb3, in the state shown in FIG. 2A) extending along theapproach stages 20, respectively. Thus each of the film removing nozzles30 can be moved from a position outside one of the approach stages 20past a position corresponding to the approach stage 20 through theentire length of the side surface of the substrate M supported on thesupport members 22 and past a position corresponding to the otherapproach stage 20 to a position outside the other approach stage 22. Themoving mechanism 40 may be a generally known moving mechanism, such as aball screw or a cylinder actuator.

While the film removing nozzles 30 thus built are being moved alongperipheral parts (the edges and the corners) of the substrate M, thethinner is spouted through the spouting nozzle holes 34 a and 34 btoward the peripheral parts of the substrate M and, at the same time,nitrogen gas is spouted through the nitrogen gas spouting ports 39 a and39 b from center side to side surface side of the substrate M so as toresolve and remove unnecessary parts formed on the peripheral parts ofthe resist film formed on the substrate M. An atmosphere around theperipheral parts of the substrate M is sucked together with liquid dropscontained in the atmosphere through the suction passages 31 b by theexhaust system so as to remove the thinner spouted onto the peripheralparts of the substrate M together with a solution produced by dissolvingthe unnecessary parts of the resist film in the thinner from thesubstrate M.

A film removing method using the film removing device of the presentinvention will be described mainly with reference to mainly FIG. 3, andFIG. 11 showing the film removing method in a flow chart.

The substrate M thus coated with a resist solution film is carried bythe pair of carrying arms 8 to the peripheral film removing device 3.The lifting and rotating mechanism 50 is driven to lift up the chuckbody 11 of the chuck 10 so as to transfer the substrate M from thecarrying arms 8 to the chuck body 11. Then, the carrying arms 8 aremoved away from the peripheral film removing device 3. Subsequently,step 11-1 is executed. In step 11-1, the chuck body 11 is lowered so asto place the substrate M on the support members 22 adjacently to theapproach stages 20. Then, the two opposite side surfaces (in the stateshown in FIG. 2A, the first side surface Mb1 and the third side surfaceMb3) of the substrate M are opposite the flat approach parts 23 of theapproach stages 20 at the corners where the two opposite side surfacesand the two other opposite side surfaces (in the state shown in FIG. 2A,the second side surface Mb2 and the fourth side surface Mb4) join, andthe upper surface Ma1 of the substrate M is substantially flush with thesurfaces of the flat approach parts 23 of the approach stages 20.

Then, the resist film removing process is started in step 11-2. In step11-2, in a state where the film removing nozzles 30 are held atpositions separated from the substrate M supported on the supportmembers 22, the exhaust system, not shown, connected to the suctionpassages 31 b of the film removing nozzles 30 is operated to startsucking the atmosphere through the suction passages 31 b (FIGS. 4A and4B). Then, the shutoff valve V2 is opened to start spouting nitrogen gasthrough the nitrogen gas spouting ports 39 a and 39 b of the filmremoving nozzles 30 and the valve V1 is opened to start spouting thethinner through the spouting nozzle holes 34 a and 34 b of the filmremoving nozzles 30. Then, each film removing nozzles 30 is movedcontinuously from a position outside one of the approach stages 20 pasta position level with the approach stage 20 through the entire length ofone of the two other opposite side surfaces of the substrate M supportedon the support members 22 and past a position level with the otherapproach stage 20 to a position outside the other approach stage 22.That is to say, each film removing nozzles 30 is moved continuouslyalong one of the two other opposite side surfaces (in the state shown inFIG. 2A, the second side surface Mb2 and fourth side surface Mb4) fromone of the approach stages 20 at one of the opposite ends of one of thetwo other opposite side surfaces to the other approach stage 20 at theother end of one of the two other opposite side surfaces. While the filmremoving nozzles 30 are thus moved, the thinner is spouted ontoperipheral parts respectively extending along the two other oppositeside surfaces as shown in FIG. 4B so as to remove unnecessary parts ofthe resist film formed respectively on the peripheral parts bydissolving the resist film in the thinner. The nitrogen gas spoutedthrough the nitrogen gas spouting ports 39 a and 39 b prevents a resistsolution thus produced by dissolving the resist film in the thinner fromspreading from the peripheral parts toward a central part of thesubstrate M. The resist solution is removed from the substrate M bybeing sucked through the suction passage 31 b. Meanwhile, nitrogen gassupplied from the nitrogen gas source 94 to the nitrogen gas spoutingheads 89 of the gas spouting system 90 is spouted into the gaps s eachformed between the corner of the substrate M and the flat approach part23 of the approach stage 20. As shown in FIG. 2B, the nitrogen gasspouted into each gap s flows along the side surface (the first sidesurface Mb1, in the state shown in FIG. 2B) facing the approach stage 20toward a side of a side surface (the second side surface Mb2, in thestate shown in FIG. 2B) continuous with the former side surface. Thusthe resist solution is prevented from flowing into the gaps s.

As apparent from the foregoing description and FIG. 2A, it is understoodthat, in the state shown in FIG. 2A, the respective peripheral parts ofthe two other opposite side surfaces (the second side surface Mb2 andthe fourth side surface Mb4, in the state shown in FIG. 2A) areprocessed simultaneously by the resist film removing process because thetwo approach stages 20 are dispose opposite to the two opposite sidesurfaces (the first side surface Mb1 and the third side surface Mb3, inthe state shown in FIG. 2A), and the film removing nozzles 30 move alongthe two other opposite side surfaces, respectively. The thinner spoutedby the film removing nozzles 30 before starting the resist film removingprocess can be prevented from splashing on the peripheral parts of thesubstrate M by the approach stage 20 disposed on the side of thestarting positions of the film removing nozzles 30. Since the approachstages 20 are disposed near the side surfaces of the substrate M, thethinner can be constantly spouted and sucked while the film removingnozzles 30 are moved across the approach stages 20 and along the towother opposite side surfaces of the substrate M, respectively.Consequently, unnecessary parts of the resist film on the peripheralparts extending along the two other opposite side surfaces of thesubstrate M can be removed. The resist solution flowing along the sidesurface across the top of the corner toward the adjacent side surface ofthe substrate M can be removed. Thus straight parts of the resist filmon the corners of the substrate M can be removed and the creation ofmist can be suppressed. That is to say, the peripheral parts of thesubstrate M extending along the side surfaces of the substrate Mopposite the film removing nozzles 30 can be stably and uniformlyprocessed. Therefore, the resist film removing process can suppressstaining parts of the resist film formed on the substrate.

Then, step 11-3 is executed after the unnecessary parts of the resistfilm have been removed from the peripheral parts extending along the twoother opposite side surfaces of the substrate M, respectively. In step11-3, in the state shown in FIG. 2A, the film removing nozzles 30 arereturned to their home positions indicated by two-dot chain lines andseparated from the substrate M supported on the support members 22, andfrom the approach stage 20. Then, the rotating and lifting mechanism 50is driven so as to lift up the chuck body 11. Thus the substrate Msupported on the support members 22 is transferred to the chuck body 11.Then, the chuck 10 lifts up the chuck body 11 to an elevated position asindicated by the arrow (1) in FIG. 3 so as to hold the substrate M at aposition above the support members 22. Subsequently, the lifting androtating mechanism 50 turns the chuck body 11 supporting the substrate Mand held at the elevated position through an angle of 90° as indicatedby the arrow (2) in FIG. 3 so as to change the angular position of thesubstrate M. Then, step 11-4 is executed. In step 11-4, the rotating andlifting mechanism 50 moves the chuck body 11 down as indicated by thearrow (3) in FIG. 3 so as to place the substrate M on the supportmembers 22. Thus, the two other opposite side surfaces of the substrateM from which the parts of the resist film have been removed arepositioned adjacently to the approach stages 20. More concretely, thetwo other opposite side surfaces of the substrate M are opposite theflat approach parts 23 of the approach stages 20 at the corners wherethe two other opposite side surfaces and the two opposite side surfacesjoin, and the upper surface Ma1 of the substrate M is substantiallyflush with the surfaces of the flat approach parts 23 of the approachstages 20.

Then, step 11-5 is executed. In step 11-5, the same resist film removingprocess is executed so as to remove unnecessary parts of the resist filmfrom peripheral parts extending along the two opposite side surfacesparallel to the paths of the film removing nozzles 30. More concretely,the film removing nozzles 30 are moved along the two opposite sidesurfaces (for example, the first side surface Mb1 and the third sidesurface Mb3) and across the approach stages 20. The solvent is spoutedonto the peripheral parts extending along the two opposite side surfacesof the substrate M extending along the paths of the film removingnozzles 30 by the film removing nozzles 30 and the resist solution isremoved from the substrate M by being sucked through the suction passage31 b. Meanwhile, nitrogen gas supplied to the nitrogen gas spoutingheads 89 of the gas spouting system 90 is spouted by the nitrogen gasspouting heads 89 of the gas spouting system 90 into the gaps s eachformed between the side surfaces, facing the corner of the substrate M,of the approach stage 20 and the two other opposite side surfaces (forexample, the second side surface Mb2 and the fourth side surface Mb4) soas to prevent the flow of the resist solution into the gaps s. Thusstraight parts of the resist film on the corners of the substrate M canbe removed and the creation of mist can be suppressed. Therefore, theresist film removing process can suppress staining parts of the resistfilm formed on the substrate.

After the resist film removing process for removing the unnecessaryparts of the resist film from the substrate M has been completed, thefilm removing nozzles 30 are returned to and held at the home positionsuntil the next cycle of the resist film removing process is started. Thelifting and rotating mechanism 50 lifts up the chuck body 11 of thechuck 10. A substrate carrying arm, not shown, disposed outside thecasing 1 of the peripheral resist film removing system 120 approachesthe peripheral film removing device 3 and receives the processedsubstrate M from the chuck body 11 being lifted up. The foregoing stepsof the resist film removing process are repeated to remove unnecessaryparts of the resist films respectively formed on substrates M.

Various changes are possible in the foregoing embodiment. Modificationsof the foregoing embodiment will be described with reference to thedrawings, in which description of parts like or corresponding to thoseof the foregoing embodiment will be omitted to avoid duplication.

In the foregoing embodiment, each of the gas spouting system 90 (90B) ofthe foregoing embodiment includes the gas spouting heads 89 (89B), thenitrogen gas source 94 (94), and the supply line 93 (93) provided with ashutoff valve V_(a) (V_(a)) and connecting the nitrogen gas source 94(94) to the gas spouting heads 89 (89B), the gas spouting heads 89 (89B)having the spouting port 91 a (91 a) opening in the side surface, facingthe substrate M supported on the support members 22, of the flatapproach part 23, an inlet port 91 b (91 b) opening in the outer sidesurface, opposite the inner side surface, of the flat approach part 23,and a discharge passage 91 extended between the spouting port 91 a andthe inlet port 91 b. The gas spouting system 90A includes the gasspouting head 89A having the nozzle 95 extending parallel to the gap s,the nitrogen gas source 94, and a gas supply line 96 connecting thenozzle 95 to the nitrogen gas source 94. Gas spouting systems other thanthose mentioned above may be used.

For example, in addition to the gas spouting system 90, 90A or 90B, thesuction mechanism 100 may be incorporated into the flat approach part 23so as to suck a gas, or a gas and liquid drops (mist) from the gap sformed between the flat approach part 23 of the approach stage 20 andthe corner of the substrate M supported on the support members. Asuction mechanism 100 shown in FIG. 10A includes an inlet 101 a openingin the side surface, facing the substrate M supported on the supportmembers 22, of the flat approach part 23, an outlet 101 b opening in theouter side surface, opposite the inner side surface, of the flatapproach part 23, and a suction line 102 extended between the spoutingport 91 a and the inlet port 91 b, and a suction line 102 connecting theoutlet 101 b to a suction device, such as a vacuum pump 103. Thespouting port 91 a of the gas spouting head 89 of the gas spoutingsystem 90 is opened in the inner side surface of the flat approach part23 facing the side surface of the substrate M at a position on the sideof the side surface (the second side surface Mb2, in the state shown inFIG. 10A) along which the film removing nozzle 30 moves with respect tothe inlet 101 a of the suction mechanism 100. The suction line 102 ofthe suction mechanism 100 shown in FIG. 10A is provided with a shutoffvalve V_(b). The vacuum pump (the suction device) 103 and the shutoffvalve V_(b) are electrically connected to the CPU 80, namely, thecontroller. Operations of the shutoff valve V_(b) and the vacuum pump103 are controlled by control signals provided by the CPU 80. Theshutoff valve V_(b) is opened and the vacuum pump 103 is actuated tosuck an atmosphere in the gap s containing nitrogen gas, the resistsolution and the mist remaining in the gap s are sucked and discharged.Thus the flow of the resist solution into the gap s and the adhesion ofthe resist solution to the substrate M can be prevented.

The gas is spouted into the gap s between the inner side surface of theflat approach part 23 of the approach stage toward a side of the sidesurface of the substrate M being processed by the film removing nozzle30 and, at the same time, the suction mechanism 100 can suck out the gasand the mist remaining in the gap s. Thus an unnecessary part of the gasspouted by the gas spouting system 90 into the gap s and flowing towarda side of an inner part of the substrate M (a opposite side of the sidesurface of the substrate M being processed by the film removing nozzle30) and the mist can be removed.

In the foregoing embodiment, each of the gas spouting system 90, 90A or90B spouts nitrogen gas into the gaps s each formed between the sidesurface of the flat approach part 23 of the approach stage 20 facing thesubstrate M and the part of the side surface near the corner of thesubstrate opposite to the flat approach part 23 toward a side of theadjacent side surface of the substrate M being processed by the filmremoving process so as to prevent the flow of the resist solution fromthe side of the side surface of the substrate M being processed by thefilm removing process into the gap s. The gas spouting mechanism 90, 90Aor 90B may be omitted and the flow of the resist solution into the gapss may be prevented by the sucking operation of the film removing nozzles30.

A peripheral film removing device in modification of the peripheral filmremoving device 3 shown in FIG. 2A will be described with reference toFIGS. 12A and 12B. As shown in FIG. 12A, by way of example, each of filmremoving nozzles 30, spouting a thinner and nitrogen gas and in asuction operation, is moved from one of opposite approach stages 20along a side surface of a substrate M in the direction of the arrowshown in FIG. 12A. The film removing nozzle 30 is moved continuouslyalong the side surface of the substrate M so as to remove an unnecessarypart of the resist film from a peripheral part extending along the sidesurface of the substrate M by the foregoing method. Then, upon thearrival of the film removing nozzle at a position corresponding to a gaps as shown in FIG. 12B, the spouting operation for spouting the thinnerand the nitrogen gas is stopped and only the sucking operation iscontinued so as to suck an atmosphere together with liquid dropscontained in the atmosphere in the gap s by the film removing nozzle 30.Thus the flow of a resist solution into the gaps s and the adhesion ofthe resist solution to the substrate M can be prevented.

The operation of the peripheral film removing device in the modificationshown in FIGS. 12A and 12B will be described with reference to a flowchart shown in FIG. 13. In step 13-1, carrying arms 8 carry a substrateM to the peripheral film removing device 3 and transfers the substrate Mto a chuck 10. Then, the chuck 10 is moved down so as to mount thesubstrate M on support members 22, and approach stages 20 are positionedclose to the substrate M.

Then, in step 13-2, each of film removing nozzles 30 previously starteda spouting operation for spouting a thinner and nitrogen gas and asucking operation is moved continuously from one of the approach stages20, namely, a first approach stage 20, along a side surface of thesubstrate M to the other approach stage 20, namely, a second approachstage 20, so as to resolve and remove an unnecessary part, formed on aperipheral part of the substrate M extending along the side surface, ofa resist film formed on the substrate M. Upon the arrival of the filmremoving nozzle 30 at a position corresponding to a gap s formed betweena side surface of the second approach stage 20 and a part of a sidesurface of the substrate M in a corner where the side surface extendingalong the second approach stage 20 and the side surface along which thefilm removing nozzle 30 moved join, the spouting operation of the filmremoving nozzle 30 for spouting the thinner and nitrogen gas is stoppedor not stopped, and the sucking operation is continued so as to preventthe flow of a resist solution into the gap s. When the sucking operationis continued without stopping the spouting operation for spouting thethinner and nitrogen gas of the film removing nozzle 30, it is desirableto continue the sucking operation while the film removing nozzle 30 ismoved at a low moving speed.

Then, in step 13-3, the film removing nozzles 30 are returned to theirhome positions after the unnecessary parts of the resist film have beenremoved from the peripheral parts extending along the two opposite sidesurfaces of the substrate M, respectively. Then, a rotating and liftingmechanism 50 is driven so as to lift up the chuck body 11 of the chuck10. Then, the chuck 10 is turned through an angle of 90° to change theangular position of the substrate M. Then, step 13-4 is executed. Instep 13-4, the chuck 10 is moved down so as to place the substrate M onsupport members 22, and the approach stages 20 are positioned near thesubstrate M.

Then, step 13-5 is executed. In step 13-5, the same resist film removingprocess is executed so as to remove unnecessary parts of the resist filmfrom peripheral parts extending along the next opposite side surfacesparallel to the paths of the film removing nozzles 30. The thinner andnitrogen gas are spouted by the film removing nozzles 30, while anatmosphere with liquid drops contained in the atmosphere is suckedthrough suction passages 31 b respectively formed in the film removingnozzles 30 so as to remove unnecessary parts of the resist film fromperipheral parts of the substrate M extending along the next other sidesurfaces of the substrate M by a film removing process. Upon the arrivalof the film removing nozzle 30 at a position corresponding to a gap sformed between the side surface of the second approach stage 20 and apart of a side surface of the substrate M in a corner where the sidesurface extending along the approach stage 20 and the side surface alongwhich the film removing nozzle 30 moved join, the spouting operation ofthe film removing nozzle 30 for spouting the thinner and nitrogen gas isstopped or not stopped, and the sucking operation is continued so as toprevent the flow of a resist solution into the gap s.

After the resist film removing process for removing the unnecessaryparts of the resist film from the substrate M has been completed, thefilm removing nozzles 30 are returned to and held at the home positionsuntil the next cycle of the resist film removing process is started. Thelifting and rotating mechanism 50 lifts up the chuck body 11 of thechuck 10. A substrate carrying arm, not shown, disposed outside thecasing 1 of the peripheral resist film removing system 120 approachesthe peripheral film removing device 3 and receives the processedsubstrate M from the chuck body 11 being lifted up. The foregoing stepsof the resist film removing process are repeated to remove unnecessaryparts of the resist films respectively formed on substrates M.

The film removing devices and the film removing methods in the foregoingembodiment and the modification have been described as applied toremoving unnecessary parts of the resist film formed on the photomasksubstrate. The film removing device and the film removing method of thepresent invention are applicable to removing unnecessary parts of a filmformed on substrates having corners other than the photomask substrate,such as glass substrates for a FPDs and glass substrates for a LCDs.

1. A film removing method of removing an unnecessary part, formed on aperipheral part of a substrate having a corner, of a film of a coatingsolution formed on the substrate by spouting a solvent on the peripheralpart of the substrate, said film removing method comprising: a substratemounting step of mounting the substrate on a support member with a firstside surface of the substrate extended near an approach stage; and afilm removing step of spouting a solvent toward the peripheral part ofthe substrate by a film removing unit and sucking a solution by the filmremoving unit while the film removing unit is being moved along a secondside surface, continuous with the first side surface, of the substrateand the approach stage; wherein in the substrate mounting step, thesubstrate is supported on the support member such that the first sidesurface faces a flat approach part of the approach stage at the corner,where the first side surface and the second side surface of thesubstrate join, and a surface of the substrate is substantially flushwith a surface of the flat approach part of the approach stage, and inthe film removing step, a gas is spouted into a gap formed between aside surface, facing the substrate, of the flat approach part and thefirst side surface, corresponding to the corner, of the substrate alongthe first side surface toward a side of the second side surface from aspouting port of a gas spouting system opening in the side surface,facing the substrate, of the flat approach part so as to prevent asolution from flowing into the gap, at least while the film removingunit is moving past a position facing the gap.
 2. The film removingmethod according to claim 1, wherein in the film removing step, asuction mechanism sucks a gas, or a gas and a liquid drop from the gapwhile the gas spouting system is spouting the gas into the gap so as toprevent the solution from flowing into the gap.
 3. The film removingmethod according to claim 1, for removing an unnecessary part of a filmformed on a quadrilateral substrate, further comprising: a positionchanging step of changing an position of the substrate by lifting up thesubstrate from the support member and turning the substrate through anangle of 90 degree about a vertical axis after the completion of thefilm removing step; a second substrate mounting step of mounting thesubstrate again on the support member with the second side surface,continuous with the first side surface, of the substrate extended nearthe approach stage; and a second film removing step of spouting asolvent toward the peripheral part of the substrate by the film removingunit and sucking a solution by the film removing unit while the filmremoving unit is being moved along a third side surface, continuous withthe second side surface and opposite to the first side surface, of thesubstrate and the approach stage; wherein in the second substratemounting step, the substrate is supported on the support member suchthat the second side surface faces the flat approach part of theapproach stage at a second corner, where the second side surface and thethird side surface of the substrate join, and the surface of thesubstrate is substantially flush with the surface of the flat approachpart of the approach stage, and a gas is spouted into a gap formedbetween the side surface, facing the substrate, of the flat approachpart and the second side surface, corresponding to the second corner, ofthe substrate along the second side surface toward a side of the thirdside surface by the gas spouting system so as to prevent a solution fromflowing into the gap at least while the film removing unit is movingpast a position facing the gap.
 4. The film removing method according toclaim 3, wherein in at least one of the film removing step and thesecond film removing step, a suction mechanism sucks a gas, or a gas anda liquid drop from the gap while the gas spouting system is spouting thegas into the gap so as to prevent the flow of the solution into the gap.